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» » Simulation of Semiconductor Devices and Processes: Volume 6 (Simulation of Semiconductor Devices Processes) (v. 6)
Simulation of Semiconductor Devices and Processes: Volume 6 (Simulation of Semiconductor Devices  Processes) (v. 6) e-book

Author:

Heiner Ryssel,Peter Pichler

Language:

English

Category:

Transport

Subcategory:

Engineering

ePub size:

1442 kb

Other formats:

azw lit azw lrf

Rating:

4.9

Publisher:

Springer; 1 edition (September 1, 1995)

Pages:

499

ISBN:

3211827366

Simulation of Semiconductor Devices and Processes: Volume 6 (Simulation of Semiconductor Devices Processes) (v. 6) e-book

by Heiner Ryssel,Peter Pichler


Start by marking Simulation of Semiconductor Devices and Processes: Volume 6 as Want to Read .

Start by marking Simulation of Semiconductor Devices and Processes: Volume 6 as Want to Read: Want to Read savin. ant to Read. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

See our disclaimer The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device.

HBT structure is obtained by process simulation, which reflects real device fabrication as accurately a. The migration to new materials and process technology will enable volume production capability for high-performance applications to 200 GHz and beyond.

HBT structure is obtained by process simulation, which reflects real device fabrication as accurately as. possible.

Heiner Ryssel, Peter Pichler. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software

Simulation of semiconductor devices and processes: Proceedings of an international conference . Simulation of Semiconductor Devices and Processes: Volume 5 Selberherr et alii Springer-Verlag, 1993, in-8 cartonnage éditeur, 504 pages.

Simulation of semiconductor devices and processes: Proceedings of an international conference held at University College of Swansea, Swansea, . Published by Springer Verlag, New York (1995).

outstanding conference on Simulation of goals. Semiconductor Devices and Processes (SISDEP) was developed which was held for the first two occasions The book covers the following topics: coupling and at the University College of Wales in Swansea in 1984 integration of process simulation, device simulation, and 1986.

The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world.

SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

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